AVS 46th International Symposium
    Thin Films Division Tuesday Sessions
       Session TF-TuA

Paper TF-TuA8
Change in Surface Roughness with the Thickness of TiO@sub2@ Film Grown on MgO(001) by Ar-ion Beam Sputtering

Tuesday, October 26, 1999, 4:20 pm, Room 615

Session: Fundamentals of Si and Dielectric PVD
Presenter: K. Maki, Yokohama City University, Japan
Authors: T. Uchitani, Yokohama City University, Japan
K. Maki, Yokohama City University, Japan
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Thin film growth mode is closely correlated with the surface roughness as predicted from some simulation by Kim and Kosterlitz (Phys. Rev.Lett., vol. 62, 2289(1989)). According to their study, the surface roughness, R@sub a@, is proportional to d@super L@ with L = 1/(D+1), where d and L represent the film thickness and the dimension, respectively. The rutile-type TiO@sub 2@ film was deposited on air-cleaved MgO(001) held at 630 °C at 3.1 x 10@super -3@ Pa in the partial pressure of O@sub 2@ and at 7.9 x 10@super -3@ Pa in the pressure of Ar by sputtering the Ti target by Ar-ion beams accelerated at 1.2 kV. The R@sub a@ versus d relationship at d > 10 nm was determined with an AFM observation, and the film crystallinity was evaluated by determining the relationship between the intensity ratio of (110) peak of TiO@sub 2@ to (004) peak of MgO in X-rays diffraction pattern and d@super 2@. By determining the former relationship, the amount of L is estimated to be 1/2 and so D is one. In other words, the growth of TiO@sub 2@ film at d > 10 nm in the present study progresses by atom by atom process which is not accompanied with the surface diffusion for the adatoms and some atomic rearrangement in the condensed phase during the film deposition. This means that the film crystallinity is independent of d which is supported from the linear relationship between X-rays diffraction intensity peak ratio and d@super 2@.