AVS 46th International Symposium
    Thin Films Division Tuesday Sessions
       Session TF-TuA

Paper TF-TuA5
Deposition Behavior and Film Characteristics of Aluminum Oxide Deposited using High Frequency Pulsed-DC Magnetron Reactive Sputtering

Tuesday, October 26, 1999, 3:20 pm, Room 615

Session: Fundamentals of Si and Dielectric PVD
Presenter: D.C. Carter, Advanced Energy Industries
Authors: D.C. Carter, Advanced Energy Industries
G.W. McDonough, Advanced Energy Industries
L.J. Mahoney, Advanced Energy Industries
G.A. Roche, Advanced Energy Industries
H.V. Walde, Advanced Energy Industries
Correspondent: Click to Email
The affects of pulsed-DC power application in reactive magnetron sputtering of insulating films has been the subject of much study in recent years. Improved process stability with decreased arcing incidence and cleaner films have resulted by applying bi-polar pulsed power at frequencies from 10 to 200 kHz to otherwise traditional DC magnetron reactive sputtering processes. Recent advances in power supply design, however have extended the usable range of DC pulsing to 300 kHz and above. At these extended frequencies it is observed that transient behavior in the magnetron discharge becomes increasingly dominant on the measured waveforms of the applied power. Little is known of how this behavior affects the dynamics in a reactive sputtering environment or how these high pulsing frequencies can act to influence the character of films reactively deposited. This study looks specifically at the affect high frequency DC pulsing has on reactively sputtered aluminum oxide. Target voltage and partial pressure hysteresis behavior are reviewed from 0 to 350 kHz to ascertain the affect pulsing frequency has on sputter target condition. Deposition rate and film properties of hardness and optical transmission are reviewed to better understand the impact high frequency pulsing has on the deposited material itself.