AVS 46th International Symposium
    Thin Films Division Monday Sessions
       Session TF-MoP

Paper TF-MoP9
Microstructure of Ti:D Films Prepared by Reactively rf Sputtering

Monday, October 25, 1999, 5:30 pm, Room 4C

Session: Poster Session
Presenter: S. Nakao, National Industrial Research Institute of Nagoya, Japan
Authors: S. Nakao, National Industrial Research Institute of Nagoya, Japan
P. Jin, National Industrial Research Institute of Nagoya, Japan
K Saitoh, National Industrial Research Institute of Nagoya, Japan
Y. Miyagawa, National Industrial Research Institute of Nagoya, Japan
S. Miyagawa, National Industrial Research Institute of Nagoya, Japan
Correspondent: Click to Email
Metal deuteride films have attracted much attention because of potential application for neutron source in ion beam technology. Especially, titanium deuteride (Ti:D) films are much stable at relatively high temperature up to about 400 @super o@C. In this study, Ti:D films were prepared by reactively rf sputtering and the microstructure was examined. Ti:D films were deposited mainly on Si substrates under the various conditions of the rf power and the ratio of Ar and D@sub 2@ gases. Thin film x-ray diffraction (XRD) measurements were carried out to examine the crystal structure of the films. Rutherford backscattering spectrometry (RBS) and elastic recoil detection analysis (ERDA) were performed with a 1.7 MV tandem-type ion accelerator to analyze the composition of the films. From the results of the XRD measurements, it was found that the Ti:D films have a delta-phase (fluorite) crystal structure at low rf power of 100 W. However, the results of RBS and ERDA measurements revealed that the Ti:D films contained the impurity elements such as hydrogen and oxygen. It was inferred from the quantitative analysis that the films were composed of delta-phase titanium deuterides (or hydrides) and amorphous titanium oxides.