AVS 46th International Symposium
    Thin Films Division Monday Sessions
       Session TF-MoP

Paper TF-MoP18
Non-Stoichiometric PMN-PT Films Grown by Laser Ablation

Monday, October 25, 1999, 5:30 pm, Room 4C

Session: Poster Session
Presenter: J.M. Siqueiros, UNAM, Mexico
Authors: A. Fundora, Universidad de la Habana, Cuba
J.M. Siqueiros, UNAM, Mexico
J. Portelles, Universidad de la Habana, Cuba
Correspondent: Click to Email
Films of Pb(Mg@sub 1/3@Nb@sub2/3@)@sub2.1@ Ti@sub0.3O3@ (PMN-PT) have been grown on Pt/SiO@sub2@/Si substrates by pulsed laser ablation. The dielectric and microstructural properties of the non stoichiometric thin films of the type: 2.1PMN-0.3PT are studied in this work. The nature of the ferroelectric layer-electrode interface is analyzed by transmission electron microscopy (TEM) as well as the effect of its characteristics in the performance of the multilayer system. Surface structure and cross section studies were performed by scanning electron microscopy (SEM). Curves of dielectric permittivity as a function of temperature and hysteresis loops are reported.