AVS 46th International Symposium
    Thin Films Division Monday Sessions
       Session TF-MoP

Paper TF-MoP16
Low-temperature Growth of Ti(C,N) Thin Films on D2 Steel and Si(100) Substrates by PEMOCVD

Monday, October 25, 1999, 5:30 pm, Room 4C

Session: Poster Session
Presenter: C.H. Heo, SungKyunKwan University, Korea
Authors: B.-C. Kang, SungKyunKwan University, Korea
J.-H. Boo, SungKyunKwan University, Korea
Y.K. Cho, SungKyunKwan University, Korea
J.-G. Han, SungKyunKwan University, Korea
C.H. Heo, SungKyunKwan University, Korea
Correspondent: Click to Email
We have deposited Ti(C,N) thin films on Si(100) and D2 steel substrates in the temperature range of 150 - 300 @super o@C using tetrakis diethylamido titanium (TDEAT) and titanium isopropoxide (TIP) by pulsed DC plasma enhanced metal-organic chemical vapor deposition (PEMOCVD) method. Polycrystalline Ti(C,N) thin films were successfully grown on either D2 steel or Si(100) surfaces at temperature as low as 150 @super o@C. Compositions of the as-grown films were determined with XPS and RBS. From XPS analysis, thin films of Ti(C,N) with low oxygen concentration were obtained. RBS data were also confirmed the changes of stoichiometry and microhardness of our films. Radical formation and ionization behaviors in plasma are analyzed by optical emission spectroscopy (OES) at various pulsed bias and gases conditions. H@sub 2@ and He+H@sub 2@ gases are used as carrier gases to compare plasma parameter and the effect of N@sub 2@ and NH@sub 3@ gases as reactive gas is also evaluated in reduction of C content of the films. In this study, we found that He and H@sub 2@ mixture gas is very effective in enhancing ionization of radicals, especially N@sub 2@ resulting is high hardness. The higher hardness of film is obtained to be ca. 1700 HK 0.01 but it depends on gas species and bias voltage. The proper process is evident for H@sub 2@ and N@sub 2@ gas atmosphere and bias voltage of 600 V. However, NH@sub 3@ gas highly reduces formation of CN radical, thereby decreasing C content of Ti(C,N) thin films in a great deal. Compared to PVD TiN films, the Ti(C,N) film grown by PEMOCVD has very good conformability; the step coverage exceeds 85% with an aspect ratio of more than 3.