AVS 46th International Symposium
    Thin Films Division Monday Sessions
       Session TF-MoP

Paper TF-MoP10
Growth of Si Thin Films on CeO@sub 2@/Si(111) Substrate Prepared by Electron Beam Evaporation

Monday, October 25, 1999, 5:30 pm, Room 4C

Session: Poster Session
Presenter: C.G. Kim, Sung Kyun Kwan University, Korea
Authors: C.G. Kim, Sung Kyun Kwan University, Korea
J.H. Yang, Sung Kyun Kwan University, Korea
B.S. Moon, Sung Kyun Kwan University, Korea
C.Y. Park, Sung Kyun Kwan University, Korea
Correspondent: Click to Email
The Si/CeO@sub 2@/Si structure is one of the silicon-on-insulator (SOI) and was prepared by a hetero-epitaxially growing method. Cerium dioxide(CeO@sub 2@) is an insulating material with a lattice mismatch of 0.35% to silicon. Si film was grown on CeO@sub 2@(111)/Si(111) substrate by using high-vacuum evaporation. We have studied on the growth mechanism of Si for the various deposition conditions and analyzed by X-ray diffraction, double crystal XRD, TEM, AFM and the mobility measurement. For homo-epitaxial growth of Si, a better epitaxial Si film had been formed 800@super o@C. But, for the Si epitaxial growth on the CeO@sub 2@(111)/Si(111) the substrate temperature was limited to about 620@super o@, because a dissociated oxygen from CeO@sub 2@ and an out-diffused carbon. The Si film was epitaxially growth along (111) direction of the CeO@sub 2@ at 620@super o@C and consisted of domains oriented along (111) direction. The mobility was 56.4cm@super 2@/(Vs) at carrier density of 5.87x10@super 19@/cm@super 3@.