AVS 46th International Symposium
    Thin Films Division Monday Sessions
       Session TF-MoA

Paper TF-MoA8
Effects of Copper Seedlayer Deposition Method for Electroplating

Monday, October 25, 1999, 4:20 pm, Room 615

Session: Fundamentals and Applications of Ionized PVD
Presenter: E.C. Cooney III, IBM Microelectronics
Authors: E.C. Cooney III, IBM Microelectronics
D.C. Strippe, IBM Microelectronics
J.W. Korejwa, IBM Microelectronics
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We have investigated copper seedlayer deposition using both ionized PVD and collimation methods by depositing similar films into agressive dual damascene structures. Step coverage measurements using TEM indicated that ionized PVD seedlayers exhibited better bottom and sidewall coverage than collimated seedlayers. Subsequent electroplating of contact structures did not indicate differences in the quality of the filling when observed using SEM. However electrical testing of 68000 dual damascene via chains did show improved chain yield for the ionized PVD deposited films. Cross-sections of the chains revelaed small voids at the bottom of the vias deposited using collimated seedlayers while no voiding was observed for the ionized PVD copper films. Finally SEM examinations of unfilled dual damascene cross-sections indicated the ionized copper seedlayers to be rougher as compared to copper films sputtered using collimation.