AVS 46th International Symposium
    Thin Films Division Monday Sessions
       Session TF-MoA

Paper TF-MoA3
Modeling of I-PVD Systems for TiN Film Deposition in Inductively Coupled Plasmas

Monday, October 25, 1999, 2:40 pm, Room 615

Session: Fundamentals and Applications of Ionized PVD
Presenter: M. Li, University of California at Berkeley
Authors: M. Li, University of California at Berkeley
D.B. Graves, University of California at Berkeley
Correspondent: Click to Email
TiN films are widely used as a diffusion barrier for aluminum, tungsten as well as copper in VLSI fabrication. Recently, ionized metal physical vapor deposition, or IPVD, has been used for TiN film deposition. However, this reactive sputtering process is relatively poorly understood. In this work, a two dimensional hybrid model, including a Monte Carlo treatment of fast sputtered atoms from the target and a fluid plasma simulation, is developed to study TiN film deposition in IPVD tools. The model includes a site balance surface model to describe the film deposition and target sputtering processes. Important issues such as neutral gas heating and rarefaction, the uniformity of film deposition across the wafer, and the film deposition characteristics have been investigated. In particular, the model predicts that the titanium species profiles and target shape are major factors in film deposition and computational uniformity at the substrate. The simulation results have been compared to the available experimental measurements.