AVS 46th International Symposium
    Thin Films Division Friday Sessions
       Session TF-FrM

Paper TF-FrM7
In Line Measurement of Ti and TiN Thickness and Optical Constants using Reflectance Data through a Vacuum Chamber Window

Friday, October 29, 1999, 10:20 am, Room 615

Session: In-situ Characterization and Material Process Imaging
Presenter: M.F. Tabet, Nanometrics Inc.
Authors: M.F. Tabet, Nanometrics Inc.
U. Kelkar, Applied Materials
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The thickness and optical constants of titanium and titanium nitride thin films were measured by visible reflectometry through a window of a vacuum deposition system while the wafer is cooling from deposition to room temperature. The measurement system is ultra-compact and was designed for integration into semiconductor processing equipment. This in-line metrology tool does not affect the system throughput. The Ti and TiN films were deposited on 3000 @Ao@ silicon dioxide film on 200 mm silicon wafers using an Applied Materials Endura PVD deposition system. The system was used to measure thin metal films with various thicknesses and deposited using conventional DC magnetron sputtering and Ionized Metal Plasma (IMP) techniques. The optical constants of the Ti and TiN films were modeled through the use of a Lorentz oscillator dispersion model. A standalone production metrology tool was used to measured both ellipsometer and reflectometer data from the same location on the wafer and simultaneously determined the thickness and optical constants model parameters. The dispersion model obtained from the analysis of the combined ellipsometry and reflectometry data was then used to fit the visible reflectance data measured in line. This measurement system can monitor Ti and TiN depositions on every wafer in a production environment.