AVS 46th International Symposium
    Thin Films Division Friday Sessions
       Session TF-FrM

Paper TF-FrM11
Growth and In Situ Characterization of Thin Films by a Dual-Plasma System

Friday, October 29, 1999, 11:40 am, Room 615

Session: In-situ Characterization and Material Process Imaging
Presenter: E.C. Samano, CCMC-UNAM, Mexico
Authors: E.C. Samano, CCMC-UNAM, Mexico
G. Soto, CCMC-UNAM, Mexico
R. Machorro, CCMC-UNAM, Mexico
Correspondent: Click to Email
Thin films of CN@sub x@, SiO@sub x@Nsub y@ have a tremendous potential to be used in the mechanical and optical industry due to its unique mechanical and dielectric properties, respectively. The stoichiometric control of these films is highly important to manage their desired properties. A dual-plasma system has been set up to provide free radicals from a solid target by laser ablation, and atoms and ions in gas phase by an ECR source. These highly reactive species are deposited on a single crystal silicon substrate. The stoichiometry and properties of carbon nitride and silicon oxynitride films are studied as a function of N@sub 2@ and O@sub 2@ gas pressure, respectively, and the several PLD and ECR deposition parameters. The films are in situ analyzed in an adjacent analysis chamber by AES, XPS and EELS to determine the chemical stability and bonding of their compounds.