AVS 46th International Symposium
    Organic Electronic Materials Topical Conference Tuesday Sessions
       Session OE+EM+AS-TuM

Paper OE+EM+AS-TuM3
Photoemission Characterization of Al/Alq@sub 3@ and Al/LiF/Alq@sub 3@ Interfaces

Tuesday, October 26, 1999, 9:00 am, Room 616/617

Session: Interfaces and Characterization of Organic Thin Films
Presenter: L. Yan, University of Rochester
Authors: L. Yan, University of Rochester
Q.T. Le, University of Rochester
Y. Gao, University of Rochester
M.G. Mason, Eastman Kodak Company
C.W. Tang, Eastman Kodak Company
Correspondent: Click to Email
We have investigated the interface formation of Al on tris-(8-hydroxyquinoline) aluminium (Alq@sub 3@) and Al on LiF/Alq@sub 3@ using X-ray and ultraviolet photoemission spectrascopy (XPS and UPS). We observed significant modifications of O1s, N1s and Al2 p core level spectra as Al was directly deposited on the Alq@sub 3@ surface. The Alq@sub 3@ features in the UPS spectra were also quickly destroyed. In contrast, a dramatically different behavior was observed for Al on the LiF/Alq@sub 3@ interface. With o nly 5Å of LiF deposited on the Alq@sub 3@ surface as a buffer layer, the reaction between Al and Alq@sub 3@ is significantly suppressed. A well-defined gap state is formed. The Alq@sub 3@ features in UPS shift to higher binding energies but remain easily recognizable. Both the core level spectra and the gap state suggest that the Alq@sub 3@ anion is formed in the presence of Al and LiF.