AVS 46th International Symposium
    Organic Electronic Materials Topical Conference Tuesday Sessions
       Session OE+EM+AS-TuM

Paper OE+EM+AS-TuM11
A Photoelectron Study of Chemically Treated Indium Tin Oxide Surface and Its Reactivity with Phenyl-Diamine

Tuesday, October 26, 1999, 11:40 am, Room 616/617

Session: Interfaces and Characterization of Organic Thin Films
Presenter: Q.T. Le, University of Rochester
Authors: Q.T. Le, University of Rochester
F. Nuesch, University of Rochester
E.W. Forsythe, University of Rochester
L.J. Rothberg, University of Rochester
Y. Gao, University of Rochester
Correspondent: Click to Email
We report on the effect of various treatments by base and acid solutions on the work function of indium tin oxide (ITO). Ultraviolet and x-ray photoelectron spectroscopy (UPS and XPS) were used to measured the work function and chemical composition, respe ctively, of the processed ITO surface. The results indicate that the magnitude of the work function shift is highly dependent on the nature of the solution. In contrast, for the same solution, the concentration of the solution appears to have little effe c t on the work function shift. In addition, the interface formation between processed ITO and N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine (NPB) using XPS and UPS is presented. The reactivity of the treated ITO surfaces versus NPB is co mp ared with the case of plasma-treated sample. The low current onset obtained from the single-layer devices based on acid-treated ITO can be attributed to the low energy barrier for hole injection at the ITO/hole-transporting material interface. This work was supported in part by DARPA DAAL 0196K0086, NSF Grant DMR-9612370, and the Swiss National Science Foundation.