AVS 46th International Symposium
    Nanometer-scale Science and Technology Division Tuesday Sessions
       Session NS-TuA

Paper NS-TuA4
The Importance of Many-body Effects in the Clustering of Charged Zn Dopant Atoms in GaAs

Tuesday, October 26, 1999, 3:00 pm, Room 612

Session: Innovative Nanoscale Measurements
Presenter: Ph. Ebert, Forschungszentrum J@um u@lich, Germany
Authors: Ph. Ebert, Forschungszentrum J@um u@lich, Germany
T.-J. Zhang, University of Tennessee
F. Kluge, Forschungszentrum J@um u@lich, Germany
M. Simon, Forschungszentrum J@um u@lich, Germany
Z. Zhang, Oak Ridge National Laboratory
K. Urban, Forschungszentrum J@um u@lich, Germany
Correspondent: Click to Email
The spatial distribution of negatively charged Zn dopant atoms in GaAs has been investigated by cross-sectional scanning tunneling microscopy. At high densities, the dopant atoms exhibit clear clustering behavior, suggesting the existence of an effective attractive interaction in addition to the screened Coulomb repulsion between two dopants. By analyzing the data through Monte Carlo simulations, we have extracted the intrinsic screening length at different dopant densities, and attributed the origin of the effective attraction to strong many-body effects in the dopant-dopant repulsion.