AVS 46th International Symposium
    Manufacturing Science and Technology Group Wednesday Sessions
       Session MS-WeM

Paper MS-WeM3
Diagnostic and Plasma Etch Endpoint Applications using Full Spectrum Optical Emission Spectroscopy

Wednesday, October 27, 1999, 9:00 am, Room 611

Session: Metrology I
Presenter: H.M. Anderson, University of New Mexico
Authors: H.M. Anderson, University of New Mexico
S. Gunther, CETAC Technologies
W. Branagh, CETAC Technologies
J. Rivers, CETAC Technologies
B. Fry, CETAC Technologies
Correspondent: Click to Email
The advantages of full spectrum optical emission spectroscopy (OES) over monochromator based systems has been readily demonstrated. Traditionally, monochromator based systems have been used to determine endpoint by monitoring one or two strongly emitting wavelengths. For exposed open areas of <1.0%, a more sensitive approach is required for the next generation of chips. Array detector based systems can provide a wealth of spectral information from a variety of potentially useful gas phase emitting species. In the case of particularly challenging applications such as reverse mask shallow trench isolation (STI) and contact etches, utilization of the full optical emission spectrum has been shown to provide tangible benefits. Production facility results regarding these and other demanding applications will be presented. The talk will largely focus on oxide etching in AMAT MXP and AMAT HDP platforms. Evolving Window Factor Analysis (EWFA) and Multiple Curve Resolution (MCR) are the princpal multivariate techniques used in the analysis. They allow one to dynamically track the principal components of the oxide etch process. EWFA is also shown to useful for automatic fault detection. MCR is used to depict the dynamic rate of formation (or depletion) of the principal chemical species in the plasma during the etch.