AVS 46th International Symposium
    Manufacturing Science and Technology Group Monday Sessions
       Session MS-MoM

Paper MS-MoM7
IMP-PVD Equipment Level Process Analysis Using Simulation

Monday, October 25, 1999, 10:20 am, Room 611

Session: Advanced Design Methodologies and Factory Modeling
Presenter: P.L.G. Ventzek, Motorola Inc.
Authors: P.L.G. Ventzek, Motorola Inc.
S. Rauf, Motorola Inc.
D.G. Coronell, Motorola Inc.
V. Arunachalam, Motorola Inc.
X.-Y. Liu, Motorola Inc.
J. Arnold, Motorola Inc.
D. Denning, Motorola Inc.
S. Garcia, Motorola Inc.
A. Korkin, Motorola Inc.
Y.-K. Kim, National Institute of Standards and Technology
Correspondent: Click to Email
Ionized metal plasma physical vapor deposition continues to be viewed as a promising means of depositing seed and barrier layers in tight critical dimension high aspect ratio features. Issues that require attention at the equipment level deal with obtaining sufficient film continuity and conformality in a uniform way across a wafer. Critical to these metrics are the delivery of the appropriate net ion current (both metal and inert) and ionization fraction of the metal flux (energy distribution and angular spread). Also important may be the energy content brought to the surface by excited state species. We have characterized these parameters using HPEM (University of Illinois) and will present a comparison between the model predictions for DOE's performed on a Cu IMP-PVD chamber. Of note from this study is the sensitivity of predicted behavior on the capacitive-inductive power distribution from the inductive coils. Very high percentages of the power delivered to the coil are lost capacitively and the fraction in very sensitive to the power capacitively coupled to the wafer. The role of metastable species generated in the plasma is also investigated. Metastable species are usually thought only to play the role of facilitating relatively low energy pathways for ionization . It turns out that heavier metals have a wealth of metastable states even at very low energy allowing them to alter the plasma behavior and to facilitate different processes at the surface when compared to lighter atomic number metals.