AVS 46th International Symposium
    Manufacturing Science and Technology Group Monday Sessions
       Session MS-MoM

Paper MS-MoM2
Aspect Ratio Dependent Etching

Monday, October 25, 1999, 8:40 am, Room 611

Session: Advanced Design Methodologies and Factory Modeling
Presenter: T.S. Cale, Rensselaer Polytechnic Institute
Authors: T.S. Cale, Rensselaer Polytechnic Institute
M. Bloomfield, Rensselaer Polytechnic Institute
S. Soukane, Rensselaer Polytechnic Institute
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This presentation reviews a study of 'aspect ratio dependent etching' (ARDE); i.e., the effect of aspect ratio on etch rate in reactive ion etching (RIE) systems. The goal is to provide guidelines for etch process developers, and involve simple but flexible models for the transport and kinetics. EVOLVE, a deposition, etch and thin film flow simulator, is used to characterize the ARDE via an RIE 'lag parameter'. Further simulation is then used relate ARDE to the neutral-to-ion flux flux ratio, in the simplified transport and kinetic models. This flux ration ratio can be related to RIE operating conditions.