AVS 46th International Symposium
    Manufacturing Science and Technology Group Monday Sessions
       Session MS-MoM

Paper MS-MoM10
Particle Simulations of Chemically Reacting Plasmas

Monday, October 25, 1999, 11:20 am, Room 611

Session: Advanced Design Methodologies and Factory Modeling
Presenter: M.A. Gallis, Sandia National Laboratories
Authors: M.A. Gallis, Sandia National Laboratories
T.J. Bartel, Sandia National Laboratories
Correspondent: Click to Email
This work focuses on the development of a particle simulation code that can be used for the modeling of low pressure inductively coupled high density plasma reactors. The code is based on the Direct Simulation Monte Carlo methodology where a relatively small number of particle simulators mimic the behavior of a large number of real particles. Only heavy particles (ions and molecules) are directly modelled. The electron number density is deduced from this of the ions assuming local charge neutrality. Since the plasma sheathes are very small the assumption of charge neutrality is used through out the computational domain. The electron temperature is calculated using two different methods. The first one uses an electron energy equation using ICP power electron conduction and inelastic electron impact reactions. The second one uses a kinetic treatment of the electrons creating an equilibrium distribution of electrons every time an estimation of the electron temperature is needed. The motion of the electron gas is then followed in a fully kinetic fashion and for a time period short enough to assume that the heavy particles remain in their positions. The ICP power deposition for both methods is determined by an external code from Oakridge National Laboratories, ORMAX. The neutral-neutral and neutral ion interactions are directly modeled. The two methods will be compared for two electro-negative systems; pure CL2 and C2F6 in the GEC test cell geometry.