AVS 46th International Symposium
    Magnetic Interfaces and Nanostructures Technical Group Tuesday Sessions
       Session MI+VM+AS-TuM

Paper MI+VM+AS-TuM1
Perpendicular Patterned Media: Fabrication and Demonstration of Data Storage

Tuesday, October 26, 1999, 8:20 am, Room 618/619

Session: Magnetic Recording: Media
Presenter: J. Wong, California Institute of Technology
Authors: J. Wong, California Institute of Technology
A. Scherer, California Institute of Technology
M. Todorovic, University of California, San Diego
S. Schultz, University of California, San Diego
Correspondent: Click to Email

Patterned media has been proposed as one of the solutions to extending data storage densities beyond 100Gbits/in@super 2@. We have fabricated perpendicular patterned media using a combination of high resolution electron beam lithography, dry etching, and electroplating. Futhermore, we have successfully demonstrated data storage in such structures. We first use vector scanned electron beam lithography to define the dot array pattern on the PMMA coated Al@sub 0.9@Ga@sub 0.1@As/GaAs substrate. After development, this pattern is transferred into the substrate using Chemically Assisted Ion Beam Etching (CAIBE). Immediately following CAIBE, we convert the Al@sub 0.9@Ga@sub 0.1@As layer into (Al@sub 0.9@Ga@sub 0.1@)@sub 2@O@sub 3@ using wet thermal oxidation. We take advantage of the highly selective etching properties of GaAs and the durable masking properties of (Al@sub 0.9@Ga@sub 0.1@)@sub 2@O@sub 3@ to create high aspect ratio Ni columns. After the dot arrays are defined in the substrate, we use electroplating to fill the etched holes with Ni, followed by polishing.@footnote 1@ Using Magnetic Force Microscopy, we find that the Ni columns are stable single domain magnets. We demonstrate data storage in these structures by controllably orienting the magnetization of individual 170nm diameter Ni columns using conventional thin film write poles. We subsequently read back the stored information using current MR or GMR read heads.@footnote 2@ This demonostration bridges the gap between the fabrication of such structures and their use in actual magnetic storage systems. Work is in progress to characterize higher density arrays (~1.3, 2.6, and 5.2Gbits/in@super 2@) in the form of data tracks (1µm in the x-direction and 0.5, 0.25, and 0.125µm apart respectively in the y-direction). @FootnoteText@ @footnote 1@ J. Wong et al., J. Appl. Phys. 85, 5489, 1999. @footnote 2@ M. Todorovic et al., Appl. Phys. Lett. 74, 2516, 1999.