AVS 46th International Symposium
    Electronic Materials and Processing Division Thursday Sessions
       Session EM2-ThA

Paper EM2-ThA9
Anhydrous Zirconium (IV) Nitrate as a CVD Precursor for ZrO@sub 2@

Thursday, October 28, 1999, 4:40 pm, Room 611

Session: Silicon Carbide and Dielectrics on Si
Presenter: J.T. Roberts, University of Minnesota
Authors: R. Smith, University of Minnesota
N. Hoelien, University of Minnesota
C. Taylor, University of Minnesota
T. Ma, University of Minnesota
S. Campbell, University of Minnesota
W.L. Gladfelter, University of Minnesota
J.T. Roberts, University of Minnesota
M. Copel, IBM T.J. Watson Research Center
D.A. Buchanan, IBM T.J. Watson Research Center
M. Gribelyuk, IBM
Correspondent: Click to Email
We report the chemical vapor deposition (CVD) of ZrO@sub 2@ from the anhydrous metal nitrate, zirconium (IV) nitrate [Zr(NO@sub 3@)@sub 4@]. Zirconia films were deposited onto 100-oriented Si substrates using thermal CVD methods. Measurements of the ZrO@sub 2@ growth kinetics imply an exceedingly low barrier for ZrO@sub 2@ nucleation on a Si(100) surface, as there was essentially no induction period between the onset of CVD and the achievement of steady-state growth. The films were extensively characterized with respect to their suitability as high dielectric constant materials in advanced microelectronic devices. Ion beam methods (Rutherford backscattering, RBS, and medium energy ion scattering spectroscopy, MEIS) suggested that the films were close to the ideal stoichiometry or slightly oxygen-rich. X-Ray diffraction established that most films were monoclinic ZrO@sub 2@. Cross-sectional transmission electron microscopy (TEM) and MEIS measurements showed that the Si-ZrO@sub 2@ interface consists of a 10-15Å thick interlayerof nearly pure SiO@sub 2@. Finally, electrical characterization measurements established low leakage current densitites across the Si-ZrO@sub 2@ interface. This study adds to a growing body of work on the usefulness of volatile, anhydrous metal nitrates as precursors for high electrical quality metal oxide materials.