AVS 46th International Symposium
    Electronic Materials and Processing Division Thursday Sessions
       Session EM2-ThA

Paper EM2-ThA5
A Thermodynamic Analysis of Silicide and Carbide Formation and Stability of W, Co, V, and Zr Thin Films on Single-Crystal SiC

Thursday, October 28, 1999, 3:20 pm, Room 611

Session: Silicon Carbide and Dielectrics on Si
Presenter: W.F. Seng, Auburn University
Authors: W.F. Seng, Auburn University
M.J. Bozack, Auburn University
P.A. Barnes, Auburn University
S.A. Catledge, University of Alabama at Birmingham
Y.K. Vohra, University of Alabama at Birmingham
Correspondent: Click to Email
Electronic devices capable of operation at elevated temperatures require understanding of the chemical reactions which occur at the metal-semiconductor interface. Phases predicted from equilibrium thermodynamics are presented in the forms of both Ellingham and Gibbs ternary diagrams to understand the temperature sequence of silicide and carbide formation and stability of the phases formed at the metal-SiC interface. W, Co, V, and Zr were deposited on single-crystal SiC by electron-beam deposition and annealed to temperatures approaching 1000 C. Resulting phases were identified by AES, XPS, and XRD and compared to the phases predicted by thermodynamic analysis. Limitations of the thermodynamic approach are also discussed.