AVS 46th International Symposium
    Electronic Materials and Processing Division Wednesday Sessions
       Session EM+NS-WeM

Invited Paper EM+NS-WeM7
Mapping Composition and Electrostatic Potential in Devices

Wednesday, October 27, 1999, 10:20 am, Room 6C

Session: Nano-characterization of Molecules, Materials, and Devices
Presenter: A. Ourmazd, IHP, Germany
Authors: A. Ourmazd, IHP, Germany
A. Orchowski, IHP, Germany
W.-D. Rau, IHP, Germany
P. Schwander, IHP, Germany
Correspondent: Click to Email
An electronic device is, in essence, a microscopically varying electrostatic potential surface, which steers the charge carriers between the device's terminals. Until recently, there were no means for directly measuring the electrostatic potential distribution in the bulk of devices. It is now possible to map the electrostatic potential in two dimensions by electron holography. Maps of deep submicron transistors have been obtained with nanometer spatial resolution and 0.1V sensitivity. The electrostatic potential surface can be tailored by changes in composition and/or doping. It is often important to separate the two effects. Electron holography alone, however, cannot distinguish between them; they both change the electrostatic potential. QUANTITEM, on the other hand, is sensitive to compositional changes only. Efforts are under way to combine the results from electron holography and QUANTITEM, in order to separate the effects of composition and doping, with first encouraging results.