AVS 46th International Symposium
    Electronic Materials and Processing Division Wednesday Sessions
       Session EM+NS-WeM

Paper EM+NS-WeM10
Applications of AFM/SCM in Imaging Implant Structures of Semiconductor Devices

Wednesday, October 27, 1999, 11:20 am, Room 6C

Session: Nano-characterization of Molecules, Materials, and Devices
Presenter: K.-J. Chao, Charles Evans & Associates
Authors: K.-J. Chao, Charles Evans & Associates
J.R. Kingsley, Charles Evans & Associates
R.J. Plano, Charles Evans & Associates
X. Lu, Charles Evans & Associates
I.D. Ward, Charles Evans & Associates
Correspondent: Click to Email
The scanning capacitance microscopy (SCM) has been widely used to investigate the two-dimensional carrier profile of semiconductor devices. In this work, SCM is used to investigate several different semiconductor devices. First, one commercially purchased integrated circuits (IC) device was cross-sectioned and polished for the SCM investigation. Implant structures near the gate were clearly resolved. Second, two semiconductor devices, one was good and the other was failed, were prepared by cross-sectioning and then followed by polishing. Implant profiles of similar structures on both devices were revealed by SCM. As compared with the good device, the thickness of the N-well structure was found to be thinner by about 0.4um for the failed device. Third, a GaAs device with Zn thermally diffused through the Si3N4 mask was studied to determine the lateral diffusion length of Zn. Applications in other cases will be presented at the conference.