AVS 46th International Symposium
    Applied Surface Science Division Monday Sessions
       Session AS2-MoA

Paper AS2-MoA8
Investigation of InP(110) Surface Damage Induced by Low Energy Ar and He Ion Bombardment

Monday, October 25, 1999, 4:20 pm, Room 6A

Session: Applied Surface Science for Microelectronics
Presenter: Q. Zhao, The Chinese University of Hong Kong, P.R. China
Authors: Q. Zhao, The Chinese University of Hong Kong, P.R. China
Z.W. Deng, Tsinghua University, P.R. China
R.W.M. Kwok, The Chinese University of Hong Kong, P.R. China
W.M. Lau, The Chinese University of Hong Kong, P.R. China
Correspondent: Click to Email
High-resolution x-ray photoelectron spectroscopy (XPS) was employed to study the surface damage on n- and p-InP(110) caused by low energy ion bombardment in an ultrahigh-vacuum (UHV) system. The dynamic process of surface Fermi level shifting induced by ion bombardment as a function of ion dosage and ion energy was also measured. Two kinds of ion He@super +@ and Ar@super +@ at 10eV and 100eV energy with different ion dosages (from 10@super 12@ to 10@super 17@ ions/cm@super 2@) were chosen to investigate the performance of ion bombarded InP(110) surface. The results showed that the Fermi levels of both n- and p InP (110) surface moved to the midgap due to He@super +@ and Ar@super +@ ion bombardment, and ultimately pinned at about 0.95eV above the valence band maximum. More importantly, it was found that even at a bombardment energy of 10eV, ion fluence of 5x10@super 16@/cm@super 2@ was enough to cause an electrically active bandgap state density of 1x10@super 12@/cm@super 2@ which can detrimentally affect the device performance of the semiconductor.