AVS 46th International Symposium
    Applied Surface Science Division Monday Sessions
       Session AS2-MoA

Paper AS2-MoA3
XPS Sputter Depth Profiling at the Pd/Y Interface@footnote *@

Monday, October 25, 1999, 2:40 pm, Room 6A

Session: Applied Surface Science for Microelectronics
Presenter: G. Neuert, Montana State University
Authors: G. Neuert, Montana State University
R.J. Smith, Montana State University
J.A. Schaefer, Technische Universität Ilmenau, Germany
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X-ray photoelectron spectroscopy (XPS) sputter depth profiling, Rutherford Backscattering Spectroscopy (RBS) and in situ resistivity measurements are used to study the Pd-Y interface. This interface is of interest because of recent work showing that Pd-capped Y films exhibit a reversible metal semiconductor transition as a function of H content in the film. The yttrium film was first evaporated on a glass substrate. A palladium layer was then evaporated on the top of the yttrium film. Both films are made by thermal evaporation using a tungsten basket with a boron-nitride crucible as heating shield. RBS is used to measure the thickness of the film and to calibrate the sputter rate for pure Pd and Y. Palladium 3d photoelectron peaks, measured by XPS, show a core level shift to higher binding energies with sputter depth. This chemical shift can be an indication of alloy formation at the Pd / Y interface. The resistance measurements are done in situ by a four probe measurement after van der Pauw. The resistance of the yttrium film is measured after finishing the yttrium evaporation. A palladium layer was then evaporated on the top of the yttrium and the resistance of the films was monitored during Pd evaporation. @FootnoteText@ @footnote *@Work supported by NSF DMR 97-10092 and NASA EPSCoR NCCW-0058. Permanent address of G. Neuert : Institut für Physik, Technische Universität Ilmenau, P.O. Box 100565, D-98684 Ilmenau, Germany.