AVS 46th International Symposium
    Applied Surface Science Division Friday Sessions
       Session AS-FrM

Paper AS-FrM9
A Comparative Evaluation of FIB CVD Processes

Friday, October 29, 1999, 11:00 am, Room 6A

Session: New or Improved Surface Related Analytical Techniques
Presenter: B.I. Prenitzer, University of Central Florida
Authors: B.I. Prenitzer, University of Central Florida
B.W. Kempshall, University of Central Florida
L.A. Giannuzzi, University of Central Florida
S.X. Da, FEI Company
F.A. Stevie, Cirent Semiconductor (Lucent Technologies)
Correspondent: Click to Email
The metal chemical vapor deposition (CVD) capability available in focused ion beam (FIB) instruments has found multiple applications, e.g., in semiconductor device modification, for mask repair, and as a means to protect the region of interest during specimen preparation for electron microscopy. Added versatility has been afforded to CVD processes by the introduction of the dual beam FIBs. Dual beam instruments incorporate both an electron column and an ion column into a single FIB, and therefore allow the CVD process to be either ion or electron assisted. Evidence indicates that the mode of deposition may be significant in determining the final properties of the metal line, i.e., chemical composition and resistivity. In addition to the characteristics of the metal line itself, damage has been observed in the surface layers of specimens in which ion beam assisted CVD processes have been employed. Maintaining the integrity of the surface layers is particularly critical when preparing specimens for subsequent microstructural and/or microanalytical evaluation of ultra-shallow regions. Cross-section transmission electron microscopy (TEM) is used to evaluate the surface integrity of single crystal Si substrates on which Pt metal lines have been grown by ion and electron beam assisted CVD processes. The effectiveness of various surface coatings in the prevention of radiation damage during ion beam induced CVD is also investigated.