| AVS 45th International Symposium | |
| Surface Science Division | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | SS1-TuA1 The Effect of Phosphorus and Germanium on Silicon Surface Chemistry J.E. Crowell, M.L. Jacobson, G.J. Batinica, M.C. Chiu, University of California, San Diego |
| 2:20pm | SS1-TuA2 In situ Boron Doping of Si(100): Effects of Low Boron Concentration on Hydride Surface Reactions B. Gong, D.E. Brown, University of Texas, Austin, S.K. Jo, Kyung Won University, South Korea, J.G. Ekerdt, University of Texas, Austin |
| 2:40pm | SS1-TuA3 Invited Paper Chemical Modification of Semiconductor Surfaces: Functionalization Using Cycloaddition Reactions S.F. Bent, New York University |
| 3:20pm | SS1-TuA5 Cycloaddition Reactions at Germanium Surfaces S.W. Lee, L.M. Nelen, University of Missouri, Columbia, H. Ihm, University of Texas, C.M. Greenlief, University of Missouri, Columbia |
| 3:40pm | SS1-TuA6 Binding Energies of Hydrogen on Flat and Vicinal Silicon Surfaces M.B. Raschke, U. Höfer, Max-Planck-Institut für Quantenoptik, Germany |
| 4:00pm | SS1-TuA7 The Reactions of Trimethylgallium and Ammonia on GaN(0001) H.-T. Lam, J.M. Vohs, University of Pennsylvania |
| 4:20pm | SS1-TuA8 An Investigation of the Surface Reaction Mechanisms of Alternating-Grown Ordered Layers: CdS on ZnSe(100) M. Han, Y. Luo, J.E. Moryl, R.M. Osgood, Jr., Columbia University |
| 4:40pm | SS1-TuA9 Competition Between Passivating and Etching in Halogen Reactions with III-V Semiconductor Surfaces W.K. Wang, University of California, Riverside, W.C. Simpson, Pacific Northwest National Laboratory, J.A. Yarmoff, University of California, Riverside |
| 5:00pm | SS1-TuA10 A Scanning Tunneling Microscopy Study of [(t-butyl)GaS]@sub 4@ Adsorption on GaAs R.I. Pelzel, B.Z. Nosho, University of California, Santa Barbara, B. Fimland, Norwegian University of Science and Technology, Norway, W.H. Weinberg, University of California, Santa Barbara |