AVS 45th International Symposium
    Surface Science Division Tuesday Sessions
       Session SS1-TuA

Paper SS1-TuA5
Cycloaddition Reactions at Germanium Surfaces

Tuesday, November 3, 1998, 3:20 pm, Room 308

Session: Semiconductor Surface Chemistry
Presenter: C.M. Greenlief, University of Missouri, Columbia
Authors: S.W. Lee, University of Missouri, Columbia
L.M. Nelen, University of Missouri, Columbia
H. Ihm, University of Texas
C.M. Greenlief, University of Missouri, Columbia
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The adsorption and reaction of a number of cyclic unsaturated hydrocarbons with the Ge(100) surface is investigated. It is shown that well-defined ordered organic layers can be formed on semiconductor surfaces. On semiconductor surfaces the majority of the reactions with hydrocarbons occur at or near the dangling bonds of the reconstructed surface. The dangling bonds on a Ge(100)-(2x1) surface are arranged in surface dimers. This arrangement of dangling bonds means that it is possible to form a molecularly ordered thin film that is covalently bound to the surface, provided that one can have the reaction occur at the dangling bond sites. In this paper we present an investigation of the structure and chemical bonding of the organic film/semiconductor interface. Data are obtained for a number of different starting precursor molecules using photoelectron spectroscopy, high resolution electron energy loss spectroscopy and temperature programmed desorption. The molecules investigated include 1,3-cyclohexadiene, 1,4-cyclohexadiene, and cyclohexene. The possibility of a surface Diels-Alder [4+2] cycloaddition, as well as, a [2+2] cycloaddition reaction are explored. Either cycloaddition reaction leads to an organic layer that is ordered with respect to the germanium surface.