| AVS 45th International Symposium | |
| Selected Energy Epitaxy Topical Conference | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | SE-ThA1 Invited Paper Selected Energy Epitaxial Deposition of GaN and AlN on SiC(0001) Using Seeded Supersonic Free-Jets of NH@sub 3@ in Helium V.M. Torres, Arizona State University, R.B. Doak, Fulbright Senior Scholar, Ruhr-Universitaet-Bochum, Germany, B.J. Wilkens, David J. Smith, I.S.T. Tsong, Arizona State University |
| 2:40pm | SE-ThA3 Invited Paper Homoepitaxial Growth of GaN Using Seeded Supersonic Molecular Beams H.H. Lamb, North Carolina State University |
| 3:20pm | SE-ThA5 The Effect of Scaling Precursor Duty Cycles on Pulsed Supersonic Molecular Beam AlN Growth Rates V.W. Ballarotto, M.E. Kordesch, Ohio University |
| 3:40pm | SE-ThA6 In-Situ Surface Cleaning of GaN Using Hyperthermal Molecular Beams A. Michel, E. Chen, O. Nam, D. Thomson, R.F. Davis, H.H. Lamb, North Carolina State University |
| 4:20pm | SE-ThA8 Invited Paper Controlling Thin Film Morphology and Selectivity using Collimated Monoenergetic Molecular Beams J.R. Engstrom, Cornell University |
| 5:00pm | SE-ThA10 Three Dimensional Modeling of Silicon Deposition Process Scale-up Employing Supersonic Jets G. Chen, I.D. Boyd, J.R. Engstrom, Cornell University |