AVS 45th International Symposium
    Selected Energy Epitaxy Topical Conference Thursday Sessions
       Session SE-ThA

Paper SE-ThA10
Three Dimensional Modeling of Silicon Deposition Process Scale-up Employing Supersonic Jets

Thursday, November 5, 1998, 5:00 pm, Room 327

Session: Seeded Supersonic Beam Epitaxial Growth
Presenter: I.D. Boyd, Cornell University
Authors: G. Chen, Cornell University
I.D. Boyd, Cornell University
J.R. Engstrom, Cornell University
Correspondent: Click to Email
A new technique to deposit silicon thin films employing supersonic beams is examined. Our previous studies involved both experimental and numerical approaches, in which the thin films were deposited at high growth rates but over relative small areas. The current studies are focused on the process scale-up by using multiple discrete supersonic jets. 1% disilane/hydrogen mixture is heated to 350 °C and ejected through nozzles to a 700 °C substrate. Three dimensional simulations are conducted to investigate the geometrical effects of the molecular beam sources. One source configuration involving multiple jets is found to successfully deposit uniform silicon films over an area of 18 cm in diameter, with a growth rate higher than 200 @Ao@/min. The molecular beam energy obtained under these conditions is approximately 1.3eV. A configuration is also designed to increase the deposition area in a laboratory facility for experimental verification.