| AVS 45th International Symposium | |
| Plasma Science and Technology Division | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | PS2-TuM1 Very Uniform and High Aspect Ratio Anisotropy SiO@sub2@ Etching Process in Magnetic Neutral Loop Discharge Plasma W. Chen, T. Hayashi, M. Itoh, Y. Morikawa, ULVAC Japan Ltd., K. Sugita, H. Shindo, Tokai University, Japan, T. Uchida, ULVAC Japan Ltd. |
| 8:40am | PS2-TuM2 Microloading Effect in Ultra-Fine SiO@sub 2@ Hole/Trench Etching Y. Chinzei, T. Kikuchi, M. Ozawa, M. Ogata, Y. Feurprier, T. Ichiki, Toyo University, Japan, H. Shindo, Tokai University, Japan, Y. Horiike, Toyo University, Japan |
| 9:00am | PS2-TuM3 Invited Paper Selective Oxide Etching in a High-Density Plasma Reactor: Gas Phase Chemistry J.L. Cecchi, T.M. Bauer, A. Inoue, M.E. Littau, M.J. Sowa, University of New Mexico |
| 9:40am | PS2-TuM5 Invited Paper Analysis of C@sub 4@F@sub 8@/Ar/O@sub 2@ Plasma for High-aspect Contact Hole Etching using Narrow-gap RIE T. Tatsumi, H. Hayashi, S. Morishita, S. Noda, Y. Hikosaka, M. Okigawa, M. Inoue, M. Sekine, Association of Super-Advanced Electronics Technologies (ASET), Japan |
| 10:20am | PS2-TuM7 Plasma Kinetics of Silicon Dioxide Etching with Fluorocarbon H. Chae, H. Sawin, Massachusetts Institute of Technology, M.T. Mocella, DuPont Fluoroproducts |
| 10:40am | PS2-TuM8 Effect of Ion Bombarding Energies in Silicon Dioxide Etching Y. Hikosaka, H. Hayashi, K. Kinoshita, S. Noda, Association of Super-Advanced Electronics Technologies (ASET), Japan, H. Tshuboi, M. Endo, N. Mizutani, Y. Nagata, ULVAC Ltd., Japan, M. Sekine, ASET, Japan |
| 11:00am | PS2-TuM9 Studies of High Density Oxide Etch Mechanisms with a Physically-based Profile Simulator V. Vahedi, D.J. Cooperberg, J.M. Cook, L. Marquez, E. Hudson, J. Winniczek, Lam Research Corporation |
| 11:20am | PS2-TuM10 The Challenge of Predictive Profile Simulators for Dielectric Etch G.S. Hwang, J. Kenney, K.P. Giapis, California Institute of Technology |
| 11:40am | PS2-TuM11 Control of Profile in High Aspect Ratio Contact and Via Etch C.H. Bjorkman, K. Doan, J. Wang, B. Pu, H. Shan, Applied Materials, Inc., N. Kuo, P. Chang, Applied Materials, Taiwan |