| AVS 45th International Symposium | |
| Plasma Science and Technology Division | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | PS-MoM1 The Independence of Feature Profile Evolution on Mask Charging During Chlorine Plasma Etching of Si (100) K.H.A. Bogart, F.P. Klemens, V.M. Donnelly, J.T.C. Lee, Bell Laboratories, Lucent Technologies |
| 8:40am | PS-MoM2 Is Notch Formation Chemical or Physical? N. Hershkowitz, A.K. Quick, University of Wisconsin, Madison |
| 9:00am | PS-MoM3 Feature Evolution Simulations of Silicon Trenches H.H. Hwang, D. Bose, Thermosciences Institute, T.R. Govindan, M. Meyyappan, NASA Ames Research Center |
| 9:20am | PS-MoM4 An Integrated Multi-Scale Modeling Approach to Predicting Ionized PVD Step Coverages D.G. Coronell, P.L.G. Ventzek, V. Arunachalam, C.-L. Liu, Motorola, D.E. Hanson, J.D. Kress, A.F. Voter, Los Alamos National Laboratory |
| 9:40am | PS-MoM5 Notch Formation by Stress Induced Etching of Polysilicon J.P. Chang, H. Sawin, Massachusetts Institute of Technology |
| 10:00am | PS-MoM6 The Influence of Insulator Charging on Ion Scattering and Feature Evolution During Plasma Etching M.A. Vyvoda, D.B. Graves, University of California, Berkeley |
| 10:20am | PS-MoM7 Feature Profile Evolution during the High Density Plasma Etching of Patterned Polysilicon A.P. Mahorowala, H. Sawin, Massachusetts Institute of Technology |
| 10:40am | PS-MoM8 Modeling of Finite 3-Dimensional Features in High Density Plasma Etching@footnote 1@ R.J. Hoekstra, M.J. Kushner, University of Illinois, Urbana-Champaign |
| 11:00am | PS-MoM9 Charging Effects in Profile Evolution during Etching of Silicon in High-Density Plasmas G.S. Hwang, K.P. Giapis, California Institute of Technology |
| 11:20am | PS-MoM10 Effect of Residual Chlorine (Cl) Atoms for Notching Formation in a High Density Plasma Reactor H.C. Lee, Y.-B. Kim, S. Beckx, S. Vanhaelemeersch, IMEC vzw, Belgium |
| 11:40am | PS-MoM11 A General Predictive Semi-Empirical Feature Profile Simulator D.J. Cooperberg, V. Vahedi, Lam Research Corporation |