| AVS 45th International Symposium | |
| Plasma Science and Technology Division | Friday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | PS-FrM1 Large Enhancement of Silicon Etch Rate by Metal Contamination P.G.M. Sebel, L.J.F. Hermans, H.C.W. Beijerinck, Eindhoven University of Technology, The Netherlands |
| 8:40am | PS-FrM2 Laser Detection of Chlorinated Neutral Etch Products During Cl@sub 2@ / Ar@super +@ Etching of Si(100) N. Materer, R.S. Goodman, S.R. Leone, JILA, NIST, and University of Colorado, Boulder |
| 9:00am | PS-FrM3 Invited Paper Recombination of Halogen Atoms on Surfaces J.W. Coburn, G.P. Kota, D.B. Graves, University of California, Berkeley |
| 9:40am | PS-FrM5 Removal of Si-O, Si-C and Si-F by Hydrogen Bake after Reactive Ion Etching on the Silicon Surface Y.-B. Kim, M. Caymax, H. Bender, S. Vanhaelemeersch, IMEC, Belgium |
| 10:00am | PS-FrM6 Characterisation of Self-aligned Contact Etch Processes using X-ray Photoelectron Spectroscopy, Time-Of-Flight SIMS, and Optical Emission Spectroscopy F.H. Bell, Siemens AG, Germany, T. Lill, Applied Materials, A. Cuthbertson, Siemens Microelectronics Ltd, England, U. Scheithauer, R. Treichler, Siemens AG, Germany |
| 10:20am | PS-FrM7 Experimental Investigation of the Respective Roles of Oxygen Atoms and Electrons in the PECVD Deposition of SiO@sub 2@ in O@sub 2@/TEOS Helicon Plasmas A. Granier, C. Vallée, A. Goullet, K. Aumaille, G. Turban, Institut des Materiaux de Nantes, France |
| 10:40am | PS-FrM8 Surface Chemistry Mechanism of Oxide Etching by High Density C@sub 2@F@sub 6@ Plasma J. Feldsien, T. Panagopoulos, D.J. Economou, University of Houston |
| 11:00am | PS-FrM9 Large Positive Silicon Ion Clusters in a Remote Silane Plasma W.M.M. Kessels, C.M. Leewis, M.C.M. van de Sanden, D.C. Schram, Eindhoven University of Technology, The Netherlands |
| 11:20am | PS-FrM10 Surface Chemistry of NF@sub 3@ Plasma and Si Surface Interaction T.W. Little, University of Washington, A. Endou, A. Miyamoto, Tohoku University, Japan, M. Kitajima, National Research Institute for Metals, Japan, F.S. Ohuchi, University of Washington |
| 11:40am | PS-FrM11 Operating High Density Plasmas in a Low Density Range : Applications to Metal Etch Processes P. Czuprynski, France Telecom CNET/DTM/TFM, France, O. Joubert, L. Vallier, France Telecom CNET, M. Heitzmann, CEA LETI, France, N. Sadeghi, J.P. Booth, CNRS, France |