AVS 45th International Symposium
    Electronic Materials and Processing Division Wednesday Sessions

Session EM1-WeA
Si Surface Chemistry

Wednesday, November 4, 1998, 2:00 pm, Room 314/315
Moderator: M.K. Weldon, Bell Laboratories, Lucent Technologies


  Click here to Download program book for this session  
  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

2:00pm EM1-WeA1 Invited Paper
Understanding the Evolution of Surface Morphology during Chemical Etching
M.A. Hines, J. Flidr, Y.-C. Huang, T.A. Newton, Cornell University
2:40pm EM1-WeA3
Structure of a Passivated Ge Surface Prepared from Aqueous Solution
P.F. Lyman, Northwestern University, D.T. Keane, Northwestern University and DND CAT, D.L. Marasco, T.-L. Lee, Northwestern University, M.J. Bedzyk, Northwestern University and Argonne National Lab
3:00pm EM1-WeA4
Reflectance Difference Spectroscopy of Ge / Si(001)
V. Zielasek, S.G. Jaloviar, M.G. Lagally, University of Wisconsin, Madison
3:20pm EM1-WeA5
Second Harmonic Study of Ge/Si(100) and Si@sub 1-x@Ge@sub x@(100) Films
P.S. Parkinson, D.E. Brown, M.C. Downer, J.G. Ekerdt, University of Texas, Austin
3:40pm EM1-WeA6
Silicon Epoxide: Fundamental Intermediate in Si(100) Oxidation
A.B. Gurevich, Columbia University, M.K. Weldon, Y.J. Chabal, B.B. Stefanov, K. Raghavachari, Bell Laboratories, Lucent Technologies
4:00pm EM1-WeA7
Structure of Ultrathin Silicon Oxide - Silicon Interfaces Studied by Ultraviolet Photoelectron Spectroscopy
J.W. Keister, J.E. Rowe, North Carolina State University, J.J. Kolodziej, Rutgers University, H. Niimi, North Carolina State University, T.E. Madey, Rutgers University, G. Lucovsky, North Carolina State University
4:20pm EM1-WeA8
Influence of Rapid Thermal Annealing on Vicinal Si(111)/SiO@sub 2@ Interfaces Investigated by Optical Second Harmonic Generation.
J.F.T. Wang, G.D. Powell, D.J. Stephens, R.S. Johnson, B.R. Solazzo, Y. Wu, D.E. Aspnes, G. Lucovsky, North Carolina State University
4:40pm EM1-WeA9
The Initial Stages of Si(100) Oxynitridation by NO: An Infrared Study
J. Eng, Jr., K.T. Queeney, Y.J. Chabal, B.B. Stefanov, K. Raghavachari, Bell Laboratories, Lucent Technologies, X. Zhang, E. Garfunkel, Rutgers University
5:00pm EM1-WeA10
Growth and Analyses of Silicon Nitride Thin Films on Si(111) and Si(100)
X.-S. Wang, N. Cue, Hong Kong University of Science & Technology, China