| AVS 45th International Symposium | |
| Electronic Materials and Processing Division | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | EM-ThM1 Air-Stable Sulfur-Based Passivation of III-V Compound Semiconductor Surfaces C.I.H. Ashby, K.R. Zavadil, A.G. Baca, P.-C. Chang, B.E. Hammons, Sandia National Laboratories |
| 8:40am | EM-ThM2 Development of Surface Morphology During H@sub 2@ Plasma Processing of GaAs(001) S.W. Robey, National Institute of Standards and Technology |
| 9:00am | EM-ThM3 Thermal Chemistry and Photochemistry of Organothiols Chemisorbed on GaAs(110) N. Camillone, III, K.A. Khan, R.M. Osgood, Jr., Columbia University |
| 9:20am | EM-ThM4 The Surface Structures of In@sub x@Ga@sub 1-x@As@sub y@P@sub 1-y@ (001) Films Grown by Metalorganic Vapor-Phase Epitaxy L. Li, B.-K. Han, M.J. Bergarney, D. Law, Q. Fu, R.F. Hicks, University of California, Los Angeles |
| 9:40am | EM-ThM5 Low Induced Damages Dry Etching of III-V Materials for HBT Applications using ICP in Chlorinated Plasma J.J. Etrillard, J.F. Bresse, C. Daguet, M. Riet, J. Mba, CNET, France Telecom |
| 10:00am | EM-ThM6 Variable Substrate Temperature for Precise Growth of II-VI Interfaces Y. Luo, M. Han, J.E. Moryl, R.M. Osgood, Jr., Columbia University |
| 10:20am | EM-ThM7 Effect of Surface Interactions on Band Offsets at Buried Semiconductor-Insulator Interfaces B.R. Schroeder, S. Meng, M.A. Leskovar, M.A. Olmstead, University of Washington |
| 10:40am | EM-ThM8 Comparison of Morphology and Interfacial Composition of Pd Ultra-thin Films on 6H- and 4H-SiC at Different Annealing Temperatures W.J. Lu, D.T. Shi, E. Bryant, A. Burger, W.E. Collins, Fisk University |
| 11:00am | EM-ThM9 Field Emission Studies of BN Overlayers on Various Substrates N. Badi, A. Tempez, D. Starikov, A. Bensaoula, University of Houston, V.P. Ageev, S.V. Garnov, M.V. Ugarov, S.M. Klimentov, E. Loubnin, V.N. Tokarev, General Physics Institute, Russia, K.L. Waters, A. Shultz, Ionwerks |
| 11:20am | EM-ThM10 Influence of Ammonia Surface Reactions in GaN Chemical Vapor Deposition M.E. Bartram, Sandia National Laboratories |
| 11:40am | EM-ThM11 Optimization of the Nitridation of Sapphire Substrates Using a Fractional Factorial Designed Experiment T.J. Kropewnicki, P.A. Kohl, Georgia Institute of Technology |