AVS 45th International Symposium
    Vacuum Technology Division Wednesday Sessions
       Session VT-WeM

Paper VT-WeM11
Field Emission Characteristics of SiC Capped Si Tip Array by Ion Beam Synthesis

Wednesday, November 4, 1998, 11:40 am, Room 329

Session: Vacuum Microelectronics
Presenter: W.Y. Cheung, The Chinese University of Hong Kong
Authors: D. Chen, The Chinese University of Hong Kong
W.Y. Cheung, The Chinese University of Hong Kong
S.P. Wong, The Chinese University of Hong Kong
Y.M. Fung, The Chinese University of Hong Kong
J.B. Xu, The Chinese University of Hong Kong
I.H. Wilson, The Chinese University of Hong Kong
R.W.M. Kwok, The Chinese University of Hong Kong
Correspondent: Click to Email
High dose carbon implantation into Si tip array and Si wafer using a high beam current density Metal Vapor Vacuum Arc ion source were performed to synthesis SiC/Si heterostructure tip array. Silicon tip array were prepared by anisotropic chemical etching. An implantation energy of 35keV was used to a dose of 1.0*10@super18@ ions/cm@super2@ were performed and subsequent annealing in argon ambient at 1200@supero@C for various time were performed to form SiC capping layer. Scanning Electron Microscopy (SEM) revealed the Si are sharp and uniformly arranged. X-ray photoelectron showed that a thin surface SiC layer has been formed. Electron Field Emission characteristics have been measured using a diode structure by using a spacer in an ultra-high vacuum chamber with a base pressure better than 2*10@super-8@ torr. Results shown that electron emission properties depend on the processes conditions of the these samples. Typical turn-on field and emission current density are about 2.5 V/mm and 1mA/cm@super2@, respectively. These results were compared with that of planar structure prepared by ion implantation into Si wafer. The dependence of the electron emission mechanism on the surface morphology and the structure of the samples will be presented and discussed. This work is supported in part by the Research Grants Council of Hong Kong (Ref. No. CUHK513/95E)