Plasma Source Ion Implantation (PSII) represents a radical departure from conventional ion implantation technology. PSII circumvents the line of sight restriction inherent in conventional ion implantation. In PSII, targets to be implanted are placed directly in a plasma source and then pulse-biased to a high negative potential. A plasma ion matrix sheath forms around the target and ions bombard the entire target. Compared with conventional ion implantation, PSII minimizes the problems of shadowing and excessive sputtering of the target material, which can severely limit the retained dose of the implanted ion species. This talk will present: a historical overview of the development of PSII; a brief review of PSII physics and technology; a summary of world-wide PSII activities; a discussion of laboratory and industrial field test results in PSII; recent activities leading to scale-up and commercialization of PSII; recent extensions of PSII technology to semiconductor processing.