AVS 45th International Symposium
    Vacuum Metallurgy Division Tuesday Sessions
       Session VM+TF-TuM

Paper VM+TF-TuM11
Low Energy Ion Beam Deposition of Oriented Diamond Microcrystallites

Tuesday, November 3, 1998, 11:40 am, Room 328

Session: Advances in Hard and Superhard Coatings
Presenter: P.K. Tse, The Chinese University of Hong Kong
Authors: P.K. Tse, The Chinese University of Hong Kong
R.W.M. Kwok, The Chinese University of Hong Kong
K.M. Lui, The Chinese University of Hong Kong
W.M. Lau, The Chinese University of Hong Kong
Correspondent: Click to Email
Ion beam deposition provides an additional control of film properties over the chemical vapor deposition (CVD) via the change of ion beam energy. In this study, low energy ion beam deposition of carbon films on silicon in the ion energy range of 200 - 1050 eV was studied. The ion beam was characterized by a Faraday cup equipped with a retarding lens. The films were characterized using X-ray photoelectron spectroscopy, characteristic electron energy loss analysis, and atomic force microscopy. It was found that graphitic films, amorphous carbon films and oriented diamond microcrystallites could be obtained separately at different ion beam energies. Highly oriented diamond microcrystallites were deposited on Si (100) wafer at energy of 200eV and substrate temperature of 420°C. The ion beam deposition will be used as a diamond seeding process which will be followed by a typical hot filament CVD process, for the growth of oriented diamond films on Si (100).