AVS 45th International Symposium
    Thin Films Division Thursday Sessions
       Session TF-ThA

Paper TF-ThA4
Sputtered Deposition of Ni@sub 3@Al Thin Films

Thursday, November 5, 1998, 3:00 pm, Room 310

Session: Ex-situ Characterization of Thin Films
Presenter: R. Banerjee, Ohio State University
Authors: G.B. Thompson, Ohio State University
X.D. Zhang, Ohio State University
R. Grylls, Ohio State University
R. Banerjee, Ohio State University
P.M. Anderson, Ohio State University
H.L. Fraser, Ohio State University
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Monolithic Ni@sub 3@Al films have been deposited using a magnetron sputtering technique. Each film was deposited onto an amorphous SiO@sub 2@ substrate at 25°C (unheated), 200°C, and 400°C. X-ray Diffraction, Transmission Electron Microscopy, and High Resolution Electron Microscopy was used to characterize the microstructure of the thin films. A nonequilibrium structure, which can be common in PVD techniques due to the high quench rates from a vapor to solid state, was observed. The phase transition towards the equilibrium state was seen with increased substrate temperature. X-ray diffraction indicated a strong [111] texture to all the deposited films in the growth direction. Although the elevated temperature samples showed the onset of a slight cubic orientation texturing. TEM/HREM was performed upon cross section and plan view specimens. An equiaxed grain structure, with a typical grain size of 20 nm, was seen in the films. No obvious macroscopic grain growth was observed for the elevated temperature samples. However a high density of planar defects was observed in the cross section of the unheated specimen. Formation of these planer defects will be discussed in terms of phase transition and structural stability in the Ni@sub 3@Al thin films.