AVS 45th International Symposium
    Thin Films Division Friday Sessions
       Session TF-FrM

Paper TF-FrM7
Thermal Stability of MOCVD TiN/PECVD SiOF Interface for Cu Metallization

Friday, November 6, 1998, 10:20 am, Room 310

Session: Thin Film Deposition from Chemical Precursors
Presenter: K.H. Kim, Louisiana State University
Authors: K.H. Kim, Louisiana State University
S.J. Park, Louisiana State University
G.S. Lee, Louisiana State University
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RC delay based on Al and SiO@sub 2@ interconnection system comprises a great portion of the total delay as circuit density increases. RC delay can be reduced by using low resistance metal or low dielectric constant insulator, or both. Thus, Cu and SiOF are preferred to be used as low resistance and low dielectric materials, respectively. However, Cu metallization system needs a stable diffusion barrier. Meanwhile, it is known that the properties of MOCVD TiN film are affected largely by the substrate material. In this study, we investigated the interface stability of MOCVD TiN/PECVD SiOF film for the possibility of integration. The SiOF film of 100 nm thickness was deposited using TEFS with Ar as a carrier and O@sub 2@ as a reactant. The MOCVD TiN film of 50 nm thickness was coated using TDEAT and He carrier at substrate temperature of 350°C. The TiN/SiOF film was annealed in the temperature range of 200 - 600°C for 30 min. in vacuum. The effect of annealing was investigated by FTIR, four point probe, C-V measurement, and AES. It was observed that the sheet resistance of the TiN film increased and the dielectric constant of the SiOF film decreased at annealing temperature above 500°C. After the TiN film was removed from the annealed TiN/SiOF film, FTIR showed unknown peak which increased as a function of annealing temperature. The results of C-V measurement also showed unstable interface at annealing temperature above 500°C. We demonstrated that the properties of MOCVD TiN/PECVD SiOF film were affected by annealing, which may be due to diffusion and interaction at interface.