AVS 45th International Symposium
    Thin Films Division Friday Sessions
       Session TF-FrM

Paper TF-FrM6
Structural and Electrical Properties of SrTiO@sub 3@ Thin Films Prepared by Plasma Enhanced MOCVD

Friday, November 6, 1998, 10:00 am, Room 310

Session: Thin Film Deposition from Chemical Precursors
Presenter: Y-.B. Hahn, Chonbuk National University, Korea
Authors: D.O. Kim, Chonbuk National University, Korea
Y-.B. Hahn, Chonbuk National University, Korea
Correspondent: Click to Email
Dielectric SrTiO@sub 3@ ultra thin films having 30 - 75 nm thickness were deposited on Pt/Si and Ir/Si substrates by plasma enhanced MOCVD using high purity Ti(O-i-C@sub 3@H@sub 7@)@sub 4@, Sr(tmhd)@sub 2@ and O@sub 2@. The structural and electrical properties of SrTiO@sub 3@ films were studied in terms of crystallinity, microstructure, current leakage, and dielectric constant. For the case of Pt/Si substrate, the peaks of (100) and (111) SrTiO@sub 3@ together with TiO2 and SrCO@sub 3@ peaks started to appear at 500 @super o@C, and at 550 @super o@C for (110) and (211) peaks without TiO@sub 2@ and SrCO@sub 3@ peaks. For Ir/Si substrate, peaks of (100) SrTiO@sub 3@ and TiO@sub 2@ appeared at 500 @super o@C, and at 550 @super o@C for (110), (111) and (210) SrTiO@sub 3@. Dielectric constants decreased as the film thickness decreased. The leakage current density of the SrTiO@sub 3@ films decreased with increasing deposition temperature up to 550 @super o@C, but somewhat increased at > 550 @super o@C. It was found that the electron current was limited by tunneling effect for films thinner than 30 nm, but limited by Schottky emission for films thicker than 30 nm. The electron affinity and depletion layer of SrTiO@sub 3@ films, based on the electron current mechanism, were 4.0-4.3 eV and 15 nm, respectively.