AVS 45th International Symposium
    Surface Science Division Wednesday Sessions
       Session SS2-WeM

Paper SS2-WeM9
Hydrogen Atom Induced Decomposition of Water Adsorbed on Si(100)

Wednesday, November 4, 1998, 11:00 am, Room 309

Session: Gas-Surface Dynamics
Presenter: L.M. Struck, National Institute of Standards and Technology
Authors: L.M. Struck, National Institute of Standards and Technology
S.A. Buntin, National Institute of Standards and Technology
Correspondent: Click to Email
The reaction of incident atomic hydrogen with water adsorbed on Si(100) is investigated using multiple internal reflection infrared (IR) spectroscopy. The clean Si(100) surface is exposed to water forming a half monolayer of both SiH and SiOH surface species. Atomic hydrogen is generated by hot filament decomposition of molecular hydrogen. The evolution of the adlayer is probed with IR spectroscopy by following the silicon hydride and hydroxyl stretch features as a function of atomic hydrogen exposure for different isotopic reaction combinations (e.g., incident D atoms on adsorbed H@sub 2@O). The results show a concomitant decrease in the Si-H and O-H stretch features with increasing D atom exposure, indicating the involvement of both the surface hydride and hydroxyl species in the initial adlayer decomposition. The implications of these results with regard to the reaction mechanism will be discussed.