AVS 45th International Symposium
    Surface Science Division Wednesday Sessions
       Session SS2-WeA

Paper SS2-WeA7
Interaction of Ethylene with the Ge(100)-2x1 Surface: Coverage and Time-Dependent Behavior

Wednesday, November 4, 1998, 4:00 pm, Room 309

Session: Photochemistry and Deposition
Presenter: A.V. Teplyakov, Stanford University
Authors: A.V. Teplyakov, Stanford University
P. Lal, New York University
Y. Noah, New York University
M.J. Kong, New York University
S.F. Bent, Stanford University
Correspondent: Click to Email
Chemical modification of semiconductor surfaces has been a subject of thorough investigations for decades because of its relevance to the fabrication of electrical and optical devices. Despite these efforts, very little is known about the chemical properties of germanium surfaces. Here we present studies of the adsorption and thermal chemistry of ethylene on Ge(100)-2x1. Ethylene has been studied in detail on Si(100)-2x1, and provides a good reference system for comparing silicon and germanium reactivity. The results of multiple internal reflection Fourier transform infrared (MIR-FTIR) spectroscopy and temperature programmed desorption (TPD) studies suggest that ethylene chemisorbs on the Ge(100)-(2x1) surface at room temperature. IR spectroscopy gives evidence for only one adsorbate structure on this surface at room temperature. However, TPD measurements show two molecular desorption features, indicating that at least two adsorption configuration can exist. Complex temperature-, time-, and coverage dependent behavior of ethylene adsorption on Ge(100)-2x1 will be presented and analyzed.