AVS 45th International Symposium
    Partial Pressure Measurements and Process Control Topical Conference Thursday Sessions
       Session PC-ThA

Invited Paper PC-ThA1
Semiconductor Applications of a Quadrupole Mass Spectrometer

Thursday, November 5, 1998, 2:00 pm, Room 317

Session: RGA Characteristics and Calibration
Presenter: R.K. Waits, MKS Instruments
Correspondent: Click to Email

Commercial quadrupole mass spectrometers (QMSs) became available in the late 1960s and have been popular in R&D labs, but until recently have found limited use in semiconductor manufacturing. To sample at pressures above 10@super -5@ Torr with ppm sensitivity or better (relative to the total process pressure), differential pumping is usually required. The newly-available, small, high-pressure QMS sensors can operate as high as 10 to 20 mTorr without differential pumping, but provide somewhat lower mass resolution and partial pressure sensitivity than a standard QMS. Applications in the semiconductor fab include equipment monitoring, process monitoring and effluent analysis. Equipment monitoring can include qualification after preventative maintenance, rate-of-rise tests, and leak identification and detection. Usually the burning question is: Why won't the vacuum chamber pump down? Other uses that are not usually considered include the qualification of replaceable parts: sputter cathodes, electrodes, lamps, shields, etc. The trend to smaller features and thinner layers on larger, more expensive wafers requires better in-situ monitoring of fabrication processes. In process monitoring, the key question is: Is this process running normally? A manufacturing monitor can be useful simply by providing a comparison between a well-behaved high-yield process and a marginal or failing process. Experience mixed with a little process expertise can link the symptoms, as shown by QMS spectra, with the root cause of the disease, result in a prompt cure, and lead to continuous process improvement. Examples will be given for physical vapor deposition (sputtering) processes, chemical vapor deposition and plasma etching. The effluent from chemical vapor deposition and plasma etch processes can be analyzed to measure the efficiency of process gas utilization or to monitor the efficacy of abatement methods used for the removal of global warming gases.