AVS 45th International Symposium
    Nanometer-scale Science and Technology Division Thursday Sessions
       Session NS-ThP

Paper NS-ThP3
Characterization of Various SiO@sub2@ by Scanning Capacitance Microscopy

Thursday, November 5, 1998, 5:30 pm, Room Hall A

Session: Nanometer-Scale Science and Technology Division Poster Session
Presenter: G.H. Buh, Seoul National University, Korea
Authors: G.H. Buh, Seoul National University, Korea
C.J. Kang, Seoul National University, Korea
K. Mang, Samsung Electronics, Korea
S. Lee, Seoul National University, Korea
C.K. Kim, Seoul National University, Korea
C. Im, Seoul National University, Korea
Y. Kuk, Seoul National University, Korea
Correspondent: Click to Email
Although electrical charge in SiO@sub2@ system can cause an adverse effect on the device performance, little is known about its spatially resolved characteristics. By using scanning capacitance microscopy (SCM), dynamics of spatially distributed trapped charge in a SiO@sub2@ film on Si can be imaged with spatial resolution of ~20nm, which is determined by tip diameter. As in the case of macroscopic capacitance-voltage (C-V), trapped charge results in VT shift. The VT shift can be measured from C-V curves at various positions with good spatial resolution. Experiments were carried out with various kinds of SiO@sub2@ processed by thermal oxidation (wet, dry), plasma enhanced chemical vapor deposition(PECVD), and atmospheric pressure chemical vapor deposition(APCVD). The VT measured on PECVD oxide was found to be lower than that of thermal oxide. This result indicates the existence of positive fixed charges in the PECVD oxide. On the contrary to the VT shift in a thermal oxide with induced traps, the shift was not observed even after 4MV/cm stress. It is believed the traps in PECVD oxide is nearly saturated.