AVS 45th International Symposium
    Nanometer-scale Science and Technology Division Thursday Sessions
       Session NS-ThM

Paper NS-ThM4
Nanometer-scale Sputter-Induced Rippling of the SiO@sub2@ Surface Characterized with Real-Time X-ray Scattering

Thursday, November 5, 1998, 9:20 am, Room 321/322/323

Session: Nanoscale Patterning and Modification
Presenter: C.C. Umbach, Cornell University
Authors: C.C. Umbach, Cornell University
R.L. Headrick, Cornell High Energy Synchrotron Source
B.H. Cooper, Cornell University
J.M. Blakely, Cornell University
E. Chason, Sandia National Laboratories
Correspondent: Click to Email
Certain advanced technologies (quantum wires, dots, etc.) may require surfaces with periodic topographic modifications to produce desirable length scales during fabrication. The formation of ripples on the surfaces of materials during ion sputtering has been known for decades and represents a potentially useful type of periodically modified substrate. In this paper we report on forming ripples on thermally-grown SiO@sub 2@ while the structure of the ripples is monitored in real-time with x-ray scattering. Ripples were formed in UHV using argon ions with energies between 0.5 and 2 keV. Ripple wavelengths between ~150 and ~600 Å were formed, with the wavelength increasing linearly with the ion energy. During sputtering, both the specular and diffuse intensity of 11 keV x-rays scattered from the surface were measured. Well-defined peaks in the diffuse scattering allow the determination of the ripple morphology. The effects of annealing during or after sputtering can also be monitored. Real-time monitoring of the ripples may permit more precise control of aspects of the ripple structure. The mechanism of ripple formation will be discussed in the context of theories of surface instabilities associated with ion bombardment.