AVS 45th International Symposium
    Nanometer-scale Science and Technology Division Friday Sessions
       Session NS+AS-FrM

Paper NS+AS-FrM8
A Study on the Post-stress Charges in SiO@sub2@ Films on Si by Scanning Capacitance Microscope

Friday, November 6, 1998, 10:40 am, Room 321/322/323

Session: Innovative Nanoscale Measurements
Presenter: K. Mang, Samsung Electronics, Korea
Authors: K. Mang, Samsung Electronics, Korea
C.J. Kang, Seoul National University, Korea
G.H. Buh, Seoul National University, Korea
C.K. Kim, Seoul National University, Korea
S. Lee, Seoul National University, Korea
C. Im, Seoul National University, Korea
Y. Kuk, Seoul National University, Korea
Correspondent: Click to Email
Using scanning capacitance microscope, The induced traps on SiO@sub2@ were imaged with @<=@20nm spatial resolution. The static and dynamic behaviors of the electronic charges were evaluated. After a voltage stress, an anomalous post-stress charge generation and relaxation effect were found. Depending on the polarity of stress voltage, post-stress tip voltage and stressed time, different relaxation trend exists at the stressed area. The induced charge density in the stressed SiO@sub2@ film was higher with the stressed time The trap dynamics is also a function of initial stress field. With the high field applied to the SiO@sub2@ film, the larger and faster generation(or relaxtion) was observed. After the trapped charges are formed, the amount and polarity of the charge vary dynamically. It is believed that thermal excitation or tunneling of one or two electrons, can cause the turn around effect, which has been poorly understood so far.