AVS 45th International Symposium
    Nanometer-scale Science and Technology Division Friday Sessions
       Session NS+AS-FrM

Invited Paper NS+AS-FrM5
Recent Advances in Scanning Capacitance Microscopy

Friday, November 6, 1998, 9:40 am, Room 321/322/323

Session: Innovative Nanoscale Measurements
Presenter: C.C. Williams, University of Utah
Authors: C.C. Williams, University of Utah
J.S. McMurray, University of Utah
V.V. Zavyalov, University of Utah
J. Kim, University of Utah
Correspondent: Click to Email
Scanning Capacitance Microscopy is a rapidly developing technique for the characterization of the electronic properties of semiconductor materials on a 10 nanometer scale. Oxide, semiconductor interface and near surface "bulk" properties can be studied by this technique. Recently, new capabilities have been developed to extract quantitative dopant/carrier profiles near electrical junctions in cross-sectioned devices. Built-in internal electric fields have been measured and compared with electrical models. Random distributions of nanometer scale "defects" have been observed at the surface of uniformly doped and oxidized silicon samples. Two-dimensional diffusion of dopant impurities has been measured by SCM and directly compared with predictions of TSUPREM4. These new developments and capabilities of the Scanning Capacitance Microscope will be described and presented.