AVS 45th International Symposium
    Manufacturing Science and Technology Group Thursday Sessions
       Session MS-ThP

Paper MS-ThP8
Computer Simulation of Three-Dimensional Asymmetries in Inductively Coupled Plasma Reactors

Thursday, November 5, 1998, 5:30 pm, Room Hall A

Session: Manufacturing Science and Technology Group Poster Session
Presenter: T. Panagopoulos, University of Houston
Authors: T. Panagopoulos, University of Houston
V. Midha, University of Houston
D.J. Economou, University of Houston
Correspondent: Click to Email
MPRES-3D, a three-dimensional version of the Modular Plasma Reactor Simulator, has been developed to study azimuthal asymmetries of the etch rate introduced by gas injection and pumping ports, and by non-uniform power deposition profiles. The finite element method using higher order elements allows accurate representation of complicated reactor geometries. A 3-D Maxwell solver was also implemented to self-consistently account for azimuthal variations of the power deposition in the plasma. The chlorine plasma etching polysilicon was taken as a system for study. Gas inlets were found to introduce some local azimuthal asymmetries. In general, however, they did not contribute substantially to non-uniformities at the wafer level. The effect of pumping port(s) and non-uniform power absorption were more important since significant disturbances of all essential plasma species can be introduced. The implementation of a focus ring was found to yield practically azimuthally symmetric etching profiles. Overall, 3-D simulation tools are viewed as critically important for the design and optimization of upcoming 300 mm wafer plasma processing tools.