AVS 45th International Symposium
    Manufacturing Science and Technology Group Thursday Sessions
       Session MS-ThM

Paper MS-ThM6
In Situ CD Measurement during Post Exposure Bake

Thursday, November 5, 1998, 10:00 am, Room 317

Session: Sensors and Support Technology
Presenter: R.H. Krukar, Bio-Rad Semiconductor
Authors: R.H. Krukar, Bio-Rad Semiconductor
N.T. Sullivan, Digital Semiconductor
S.L. Prins, Bio-Rad Semiconductor
J.R. McNeil, Bio-Rad Semiconductor
Correspondent: Click to Email
As critical dimensions are reduced below 0.18 micron, post exposure bake is emerging as a critical and controllable process. Direct correlations between bake times and line width have been reported. We built an in-situ post exposure bake sensor and monitored the critical dimensions of a SRAM pattern as it baked. The data indicates that production of an accurate in-situ PEB monitor is possible.