AVS 45th International Symposium
    Electronic Materials and Processing Division Thursday Sessions
       Session EM2-ThA

Paper EM2-ThA4
Real-Time Optical Control of Ga@sub 1-x@In@sub x@P Film Growth by P-Polarized Reflectance

Thursday, November 5, 1998, 3:00 pm, Room 316

Session: Non-destructive Testing and In-situ Diagnostics
Presenter: N. Dietz, North Carolina State University
Authors: N. Dietz, North Carolina State University
K. Ito, North Carolina State University
V. Woods, North Carolina State University
Correspondent: Click to Email
The engineering of advanced optoelectronic integrated circuits implies the stringent control of thickness and composition. These demands led to the development of surface-sensitive real-time optical sensors that are able to move the control point close to the point where the growth occurs, which in a chemical beam epitaxy process is the surface reaction layer (SRL), built up of physisorbed and chemisorbed precursor fragments between the ambient and film interface. In this contents, we explored the application of p-polarized reflectance spectroscopy (PRS) for real-time monitoring and control of pulsed chemical beam epitaxy (PCBE) during low temperature growth of epitaxial Ga@sub 1-x@In@sub x@P heterostructures on Si(001) substrates by PCBE. Using a 'reduced order kinetic model' we demonstrate the linkage of the PRS response towards surface reaction chemistry, composition, film growth rate, and film properties. Mathematical control algorithms are introduced and applied that link the PR signals to the growth process control parameters to control composition and growth rate of epitaxial Ga@sub 1-x@In@sub x@P heterostructures.